DocumentCode :
2063620
Title :
Low-power high-speed communication with short-millimeter-wave CMOS transceivers
Author :
Fujishima, Minoru
Author_Institution :
Grad. Sch. of Frontier Sci. of Matter, Hiroshima Univ., Hiroshima, Japan
fYear :
2013
fDate :
28-31 Oct. 2013
Firstpage :
1
Lastpage :
4
Abstract :
Recently, short-distance high-speed wireless communication using a 60 GHz band has been studied for mobile application. To realize higher-speed wireless communication while maintaining low power consumption for mobile application D band (110-170 GHz) is promising since it can potentially provide a wider frequency band. Thus, we have studied D-band CMOS circuits to realize low-power ultrahigh-speed wireless communication. In the D band, however, since no sufficient device model is provided, research generally has to start from device modeling. In this paper, a 10 Gbps wireless transceiver with a power consumption of 98 mW is demonstrated using the 135 GHz band, where the architecture is optimized to realize both low power and high data transfer rate.
Keywords :
CMOS integrated circuits; field effect MIMIC; low-power electronics; radio transceivers; D-band CMOS circuits; bit rate 10 Gbit/s; frequency 110 GHz to 170 GHz; frequency 60 GHz; high data transfer rate; low power consumption; low-power ultrahigh-speed wireless communication; mobile application D band; power 98 mW; short-distance high-speed wireless communication; short-millimeter-wave CMOS transceivers; wireless transceiver; CMOS integrated circuits; Power demand; Receivers; Solid state circuits; Transceivers; Transmitters; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
ISSN :
2162-7541
Print_ISBN :
978-1-4673-6415-7
Type :
conf
DOI :
10.1109/ASICON.2013.6811828
Filename :
6811828
Link To Document :
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