Current status of GaN heterojunction bipolar transistors

Author

Feng, M. ; Price, R.K. ; Chan, R. ; Chun, T. ; Dupuis, R.D. ; Keogh, D.M. ; Li, J.C. ; Conway, A.M. ; Qiao, D. ; Raychaudhuri, S. ; Asbeck, P.M.

Author_Institution

Illinois Univ., Urbana, IL, USA

fYear

2004

fDate

13-14 Sept. 2004

Firstpage

26

Lastpage

31

Abstract

This paper reviews the current state-of-the-art GaN HBT results, and discusses the advantages of GaN HBTs over GaN HFETs and other material systems for high power amplifier applications. Technical difficulties associated with GaN HBTs such as MOCVD material growth, ICP dry etching, and ohmic contact issues are discussed. Methods for the elimination of technical issues and the authors´ recommended approaches for practical realization of the GaN HBT-based RF high power amplifiers are described.

Keywords

III-V semiconductors; MOCVD; etching; gallium compounds; heterojunction bipolar transistors; ohmic contacts; power amplifiers; radiofrequency amplifiers; wide band gap semiconductors; GaN; HBT-based RF high power amplifiers; ICP dry etching; MOCVD material growth; heterojunction bipolar transistors; high power amplifiers; ohmic contacts; Conducting materials; Electric breakdown; Gallium nitride; HEMTs; Heterojunction bipolar transistors; Linearity; MODFETs; Semiconductor materials; Thermal conductivity; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

Print_ISBN

0-7803-8618-3

Type

conf

DOI

10.1109/BIPOL.2004.1365737

Filename

1365737