Title :
Technique for measuring base-emitter misalignment using split base structure [HBT]
Author :
Cismaru, Cristian ; Li, James Chingwei ; Zampardi, Peter
Author_Institution :
Skyworks Solutions, Inc., Newbury Park, CA, USA
Abstract :
We report an electrical method for measurement of emitter-base misalignment on an InGaP/GaAs hetero-structure bipolar transistor (HBT) technology with nanometer resolution. The method is suitable for in-line process monitoring of emitter-base misalignment and represents a better alternative to more conservative beta-ratio measurements.
Keywords :
III-V semiconductors; electric resistance measurement; gallium compounds; heterojunction bipolar transistors; indium compounds; process monitoring; semiconductor device measurement; spatial variables measurement; HBT; InGaP-GaAs; base-emitter misalignment measurement; beta-ratio measurements; heterostructure bipolar transistor; in-line process monitoring; split base structure; Bipolar transistors; Current density; Current measurement; Electric variables measurement; Electrical resistance measurement; Heterojunction bipolar transistors; Monitoring; Performance evaluation; Testing; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365738
