DocumentCode :
2063778
Title :
15.1 An 85dB-DR 74.6dB-SNDR 50MHZ-BW CT MASH ΔΣ modulator in 28nm CMOS
Author :
Do-Yeon Yoon ; Ho, Stacy ; Hae-Seung Lee
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear :
2015
fDate :
22-26 Feb. 2015
Firstpage :
1
Lastpage :
3
Abstract :
A multi-stage noise-shaping (MASH) architecture is an attractive approach for its aggressive noise-shaping capability and relaxed stability requirements. However, in practice the quantization noise leakage associated with the mismatch between analog and digital transfer functions degrades performance significantly. The discrete-time (DT) Sturdy-MASH (SMASH) architecture avoids this problem, and promises a higher performance potential [1]. Although straightforward in DT implementation, the SMASH architecture poses challenges in continuous-time (CT) implementation demanded by high-bandwidth applications. This paper presents a 3-1 CT MASH A2 modulator to address these challenges. The modulator is clocked at 1.8GHz and achieves 85dB DR, 85.2dBc SFDR, and 74.6dB SNDR at a 50MHz BW.
Keywords :
CMOS integrated circuits; continuous time systems; integrated circuit design; modulators; sigma-delta modulation; bandwidth 50 MHz; continuous-time implementation; discrete-time sturdy-MASH architecture; frequency 1.8 GHz; multistage noise-shaping architecture; Calibration; Clocks; Delays; Feedforward neural networks; Modulation; Multi-stage noise shaping; Noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-6223-5
Type :
conf
DOI :
10.1109/ISSCC.2015.7063031
Filename :
7063031
Link To Document :
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