Monolithic integrated magnetic sensor in a digital CMOS technology using a switched current interface system

Author

Rubio, C. ; Bota, S. ; Macías, J.G. ; Samitier, J.

Author_Institution

Dept. Electron., Barcelona Univ., Spain

Volume

1

fYear

2000

fDate

2000

Firstpage

69

Abstract

A magnetic field-to-voltage converter using a magnetic MOSFET (MAGFET) device has been designed, simulated and tested. The sensor was measured under magnetic fields ranging from 0 to 0.8 T and the obtained sensitivity was 0.03 T¹ with an offset value lower than 0.2%. A macro model for the MAGFET in the saturation region is presented. Also, we have designed a complete integrated measurement system including the sensor, bias interface circuit and a A/D converter based on a current-mode technique

Keywords

CMOS digital integrated circuits; MOSFET; analogue-digital conversion; magnetic sensors; 0 to 0.8 T; MAGFET; digital CMOS technology; integrated measurement system; macro model; magnetic MOSFET device; magnetic field-to-voltage converter; monolithic integrated magnetic sensor; saturation region; sensitivity; split drain; switched current interface; CMOS technology; Current measurement; Integrated circuit measurements; MOSFET circuits; Magnetic devices; Magnetic field measurement; Magnetic sensors; Saturation magnetization; Sensor systems; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation and Measurement Technology Conference, 2000. IMTC 2000. Proceedings of the 17th IEEE

Conference_Location

Baltimore, MD

ISSN

1091-5281

Print_ISBN

0-7803-5890-2

Type

conf

DOI

10.1109/IMTC.2000.846814

Filename

846814