Title :
A 7.3-GHz, 55% tuning range emitter degenerated active inductor VCO
Author :
Zhan, J.H.C. ; Duster, J.S. ; Kornegay, K.T.
Author_Institution :
Cornell Broadband Commun. Res. Lab., Cornell Univ., Ithaca, NY, USA
Abstract :
A 7.3-GHz, 55%-tuning-range active inductor VCO fabricated in an IBM 6HP SiGe BiCMOS process is presented. It occupies an area of 165 μm×335 μm and draws 15 mA of DC current from a 3.6 V supply to provide -74 dBc/Hz of phase noise at a 1 MHz offset.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC oscillators; circuit tuning; inductors; phase noise; semiconductor materials; voltage-controlled oscillators; 15 mA; 165 micron; 3.6 V; 335 micron; 7.3 GHz; BiCMOS process; SiGe; VCO tuning range; active inductor VCO; emitter degenerated VCO; phase noise; Active inductors; Capacitors; Circuits; Frequency; Inductance; Phase noise; Ring oscillators; Silicon germanium; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365746
