"On-glass" process option for BiCMOS technology

Author

Aksen, E. ; van Noort, W.D. ; Bower, D. ; Bell, N. ; Dekker, R. ; de Boer, W. ; Rodriguez, A. ; Deixler, P. ; Havens, R.J. ; Magnée, P. H C

Author_Institution

Philips Res. Leuven, Belgium

fYear

2004

fDate

13-14 Sept. 2004

Firstpage

64

Lastpage

67

Abstract

An industrial SiGe BiCMOS technology is presented, in which the silicon substrate has been removed and replaced by a lossless glass substrate. This will enable the integration of better passives, while the active devices remain fully library compatible. Specifically, ideal NPN characteristics with 111/94 GHz f_T/f_max are shown without significant degradation of the thermal characteristics. This substrate transfer technology requires almost no changes to the standard processing and gives access to high-performance inverse NPN and vertical PNP devices, in addition to the lossless substrate.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; glass; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor materials; substrates; 111 GHz; 94 GHz; BiCMOS technology; HBT; SiGe; inverse NPN devices; lossless glass substrate; on-glass process; passives integration; substrate transfer technology; vertical PNP devices; BiCMOS integrated circuits; Coupling circuits; Dielectric substrates; Diffusion tensor imaging; Glass; Isolation technology; Laser radar; Libraries; Silicon; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

Print_ISBN

0-7803-8618-3

Type

conf

DOI

10.1109/BIPOL.2004.1365747

Filename

1365747