Title :
Differential distributed amplifier and oscillator in SiGe BiCMOS using close-packed interleaved on-chip transmission lines
Author :
Guckenberger, Drew ; Kornegay, Kevin T.
Author_Institution :
Cornell Broadband Commun. Res. Lab., Cornell Univ., Ithaca, NY, USA
Abstract :
A monolithic differential distributed amplifier using close-packed, shielded, meandered transmission lines and a delay-matched rotationally symmetric amplifier cell is implemented using a SiGe BiCMOS process with an fT of 120 GHz. A broadband differential power gain of 7.5 dB is achieved with a bandwidth of 25 GHz, while consuming 30 mA from a 3.3 V supply. The amplifier can also be configured as a differential oscillator by connecting the input and output pads with wire bonds. This results in an oscillation frequency of 9.2 GHz with a phase noise of -103 dBc/Hz at a 1 MHz offset and single-ended output power of -6 dBm.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; MMIC oscillators; differential amplifiers; distributed amplifiers; high-frequency transmission lines; lead bonding; phase noise; semiconductor materials; 120 GHz; 25 GHz; 3.3 V; 30 mA; 7.5 dB; 9.2 GHz; BiCMOS; SiGe; broadband differential power gain; close-packed interleaved on-chip transmission lines; delay-matched rotationally symmetric amplifier cell; differential distributed amplifier; differential oscillator; phase noise; shielded meandered transmission lines; single-ended output power; wire bond input/output pad connection; BiCMOS integrated circuits; Broadband amplifiers; Delay lines; Differential amplifiers; Distributed amplifiers; Germanium silicon alloys; Oscillators; Power transmission lines; Silicon germanium; Transmission lines;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365748
