Title :
SiGe bipolar technology for automotive radar applications
Author :
Böck, J. ; Schäfer, H. ; Aufinger, K. ; Stengl, R. ; Boguth, S. ; Schreiter, R. ; Rest, M. ; Knapp, H. ; Wurzer, M. ; Perndl, W. ; Böttner, T. ; Meister, T.F.
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
A SiGe bipolar technology for automotive radar applications around 77 GHz has been developed. A cut-off frequency of 200 GHz, a maximum oscillation frequency of 275 GHz, and a gate delay of 3.5 ps have been obtained. First key building blocks for 77 GHz systems like VCOs and mixers have been realized with this technology.
Keywords :
Ge-Si alloys; bipolar MIMIC; millimetre wave mixers; millimetre wave oscillators; road vehicle radar; semiconductor materials; voltage-controlled oscillators; 200 GHz; 275 GHz; 3.5 ps; 77 GHz; SiGe:C; VCO; automotive radar; bipolar technology; gate delay; maximum oscillation frequency; mixers; Automotive engineering; Capacitance; Costs; Cutoff frequency; Delay; Fabrication; Germanium silicon alloys; Manufacturing; Radar applications; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365751
