Title :
Photoluminescence centers in γ-irradiated bismuth-doped glasses
Author :
Denker, B.I. ; Galagan, B.I. ; Shulman, J.L. ; Sverchkov, S.E. ; Dianov, E.M.
Author_Institution :
A.M.Prokhorov Gen. Phys. Inst., RAS, Moscow, Russia
Abstract :
In the present investigation the authors have shown that spectrally identical NIR emitting centers can be formed in Bi doped phosphate glasses either by high-temperature melting or by room-temperature γ-irradiation. The paper illustrates this statement by comparing the 1.05-1.2 μm emission excitation spectra in high-temperature melted and in γ-irradiated low-temperature melted glass samples of identical composition. The latter sample exhibited no NIR emission before γ-irradiation.
Keywords :
bismuth; gamma-ray effects; melting; phosphate glasses; photoluminescence; γ-irradiated bismuth-doped glasses; Bi doped phosphate glasses; NIR emitting centers; PO4:Bi; high-temperature melting; low-temperature melted glass; photoluminescence centers; temperature 293 K to 298 K; wavelength 1.05 mum to 1.2 mum; Glass;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
DOI :
10.1109/CLEOE.2011.5942837
