Title :
16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method
Author :
Matsuzaki, Takanori ; Onuki, Tatsuya ; Nagatsuka, Shuhei ; Inoue, Hiroki ; Ishizu, Takahiko ; Ieda, Yoshinori ; Yamade, Naoto ; Miyairi, Hidekazu ; Sakakura, Masayuki ; Atsumi, Tomoaki ; Shionoiri, Yutaka ; Kato, Kiyoshi ; Okuda, Takashi ; Yamamoto, Yoshi
Author_Institution :
Semicond. Energy Lab., Kanagawa, Japan
Abstract :
As the number of devices connected to the Internet increases, servers and mobile devices must process increasingly large volumes of data, and also accommodate the increasing demand for high-speed and large-capacity working memory keeping the power consumption low. This need is being fulfilled by emerging devices, such as resistive RAM, phase-change RAM, and MRAM [1], which realize high-speed, high-density and nonvolatile memory, significantly enhancing the performance of CPUs with integrated memories.
Keywords :
MRAM devices; field effect transistor circuits; gallium compounds; indium compounds; phase change memories; CPU; InGaZnO; MRAM; cancel write method; crystalline FET; nonvolatile memory; phase-change RAM; power consumption; storage capacity 128 Kbit; Accuracy; Capacitors; Field effect transistors; Nonvolatile memory; Random access memory; Threshold voltage;
Conference_Titel :
Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-6223-5
DOI :
10.1109/ISSCC.2015.7063048
