DocumentCode
2064185
Title
Barrier effects in SiGe HBT: modeling of high-injection base current increase
Author
Fregonese, S. ; Zimmer, T. ; Maneux, C. ; Sulima, P.Y.
Author_Institution
ENSEIRB, Bordeaux I Univ., Talence, France
fYear
2004
fDate
13-14 Sept. 2004
Firstpage
104
Lastpage
107
Abstract
The HBT´s parasitic energy band barrier formation, located at the hetero-interface, was investigated. Physical simulations show that additional base current increase in the high-injection regime is associated with the parasitic barrier formation. The charge calculation related to the parasitic barrier allows us to derive a model for the base current increase which is implemented into an electrical scalable compact model and applied on measurements.
Keywords
Ge-Si alloys; band structure; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; HBT barrier effects; SiGe; electrical scalable compact model; heterointerface; high-injection base current increase modeling; parasitic barrier charge calculation; parasitic energy band barrier formation; Charge carrier processes; Charge measurement; Current density; Current measurement; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Poisson equations; Semiconductor process modeling; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN
0-7803-8618-3
Type
conf
DOI
10.1109/BIPOL.2004.1365756
Filename
1365756
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