Title :
Barrier effects in SiGe HBT: modeling of high-injection base current increase
Author :
Fregonese, S. ; Zimmer, T. ; Maneux, C. ; Sulima, P.Y.
Author_Institution :
ENSEIRB, Bordeaux I Univ., Talence, France
Abstract :
The HBT´s parasitic energy band barrier formation, located at the hetero-interface, was investigated. Physical simulations show that additional base current increase in the high-injection regime is associated with the parasitic barrier formation. The charge calculation related to the parasitic barrier allows us to derive a model for the base current increase which is implemented into an electrical scalable compact model and applied on measurements.
Keywords :
Ge-Si alloys; band structure; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; HBT barrier effects; SiGe; electrical scalable compact model; heterointerface; high-injection base current increase modeling; parasitic barrier charge calculation; parasitic energy band barrier formation; Charge carrier processes; Charge measurement; Current density; Current measurement; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Poisson equations; Semiconductor process modeling; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365756
