Title :
Generation and integration of scalable bipolar compact models [HBT example]
Author :
Sheridan, David C. ; Murty, Ramana M. ; Newton, Kim M. ; Johnson, Jeffrey B.
Author_Institution :
IBM Microeletronics Div., Essex Junction, VT, USA
Abstract :
This paper investigates the methodologies for generating and integrating scalable bipolar models in the modern design environment. Additionally, fundamental bipolar parameter scaling is reviewed and demonstrated with a scalable SiGe HBT model valid for models such as VBIC, MEXTRAM, and HiCUM.
Keywords :
heterojunction bipolar transistors; semiconductor device models; BiCMOS process technologies; HiCUM; MEXTRAM; SiGe; VBIC; bipolar parameter scaling; model generation; model integration; scalable HBT model; scalable bipolar compact models; BiCMOS integrated circuits; Bipolar transistors; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit modeling; Integrated circuit technology; Modems; Silicon germanium; Solid modeling;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365763
