Title :
A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters [bipolar transistor examples]
Author :
Cuoco, V. ; Neo, W.C.E. ; de Vreede, L.C.N. ; de Graaff, H.C. ; Nanver, L.K. ; Buisman, K. ; Wu, H.C. ; Jos, H.F.F. ; Burghartz, J.N.
Author_Institution :
HiTeC Group, Delft Univ. of Technol., Netherlands
Abstract :
This paper presents an approach for the extraction of the series parasitics of semiconductor devices. The approach is based on the inherently different bias dependent behavior of y-parameters for a device with series parasitics compared to a device without series parasitics. The principles of this new method are verified analytically as well in simulations using the ADS Gummel-Poon model. In conclusion we have applied the proposed extraction method on measured data of DIMES-03 bipolar transistors of different sizes.
Keywords :
bipolar transistors; electric resistance; semiconductor device models; ADS Gummel-Poon model; DIMES-03 bipolar transistors; bias-dependent y-parameters; parameter extraction technique; semiconductor device series parasitic resistance; Analytical models; Bipolar transistors; Data mining; Electrical resistance measurement; Frequency; Paper technology; Semiconductor device noise; Semiconductor devices; Size measurement; Testing;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365766
