A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters [bipolar transistor examples]

Author

Cuoco, V. ; Neo, W.C.E. ; de Vreede, L.C.N. ; de Graaff, H.C. ; Nanver, L.K. ; Buisman, K. ; Wu, H.C. ; Jos, H.F.F. ; Burghartz, J.N.

Author_Institution

HiTeC Group, Delft Univ. of Technol., Netherlands

fYear

2004

fDate

13-14 Sept. 2004

Firstpage

148

Lastpage

151

Abstract

This paper presents an approach for the extraction of the series parasitics of semiconductor devices. The approach is based on the inherently different bias dependent behavior of y-parameters for a device with series parasitics compared to a device without series parasitics. The principles of this new method are verified analytically as well in simulations using the ADS Gummel-Poon model. In conclusion we have applied the proposed extraction method on measured data of DIMES-03 bipolar transistors of different sizes.

Keywords

bipolar transistors; electric resistance; semiconductor device models; ADS Gummel-Poon model; DIMES-03 bipolar transistors; bias-dependent y-parameters; parameter extraction technique; semiconductor device series parasitic resistance; Analytical models; Bipolar transistors; Data mining; Electrical resistance measurement; Frequency; Paper technology; Semiconductor device noise; Semiconductor devices; Size measurement; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

Print_ISBN

0-7803-8618-3

Type

conf

DOI

10.1109/BIPOL.2004.1365766

Filename

1365766