Title :
Non linear 3D electrothermal investigation on power MOS chips
Author :
Chauffleur, Xavier ; Tounsi, Patrick ; Dorkel, Jean-Marie ; Dupuy, Philippe ; Fradin, J.P.
Author_Institution :
EPSILON Ingenierie, Labege, France
Abstract :
Based on the use of a boundary element solver, a fully coupled electrical and thermal 3D modeling for low voltage power MOS transistors is proposed. The analogy between the 3D heat conduction and the 3D electrical conduction is turned to good account. The coupling between these two phenomena gives us the realistic voltage and current distributions in more than the temperature mapping. Results obtained from simpler approaches are compared to the reference solution.
Keywords :
coupled mode analysis; electrical conductivity; heat conduction; low-power electronics; power MOSFET; semiconductor device models; 3D electrical conduction; 3D heat conduction; HDTMOS power transistor; boundary element solver; current distributions; fully coupled electrical/thermal modeling; low voltage power MOS transistors; nonlinear 3D electrothermal simulation; power MOS chips; temperature mapping; voltage distributions; Bonding; Couplings; Current density; Electrothermal effects; Joining processes; Low voltage; Temperature dependence; Temperature distribution; Thermal conductivity; Wires;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365768
