Non linear 3D electrothermal investigation on power MOS chips

Author

Chauffleur, Xavier ; Tounsi, Patrick ; Dorkel, Jean-Marie ; Dupuy, Philippe ; Fradin, J.P.

Author_Institution

EPSILON Ingenierie, Labege, France

fYear

2004

fDate

13-14 Sept. 2004

Firstpage

156

Lastpage

159

Abstract

Based on the use of a boundary element solver, a fully coupled electrical and thermal 3D modeling for low voltage power MOS transistors is proposed. The analogy between the 3D heat conduction and the 3D electrical conduction is turned to good account. The coupling between these two phenomena gives us the realistic voltage and current distributions in more than the temperature mapping. Results obtained from simpler approaches are compared to the reference solution.

Keywords

coupled mode analysis; electrical conductivity; heat conduction; low-power electronics; power MOSFET; semiconductor device models; 3D electrical conduction; 3D heat conduction; HDTMOS power transistor; boundary element solver; current distributions; fully coupled electrical/thermal modeling; low voltage power MOS transistors; nonlinear 3D electrothermal simulation; power MOS chips; temperature mapping; voltage distributions; Bonding; Couplings; Current density; Electrothermal effects; Joining processes; Low voltage; Temperature dependence; Temperature distribution; Thermal conductivity; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

Print_ISBN

0-7803-8618-3

Type

conf

DOI

10.1109/BIPOL.2004.1365768

Filename

1365768