Title :
LDMOSFET and SiGe:C HBT integrated in a 0.25 μm BiCMOS technology for RF-PA applications
Author :
Muller, D. ; Giry, A. ; Arnaud, C. ; Arricastres, C. ; Sommet, R. ; Szelag, B. ; Monroy, A. ; Pache, D.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
An optimized LDMOSFET and a SiGe:C HBT for PA design, integrated in a BiCMOS technology, are described in this article. Each device of interest, for PA applications, is highlighted via its electrical performance - static, small and large signal.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF power amplifiers; carbon; heterojunction bipolar transistors; power MOSFET; power bipolar transistors; semiconductor materials; 0.25 micron; 1.74 GHz; BiCMOS technology; HBT; LDMOSFET; SiGe:C; integrated RF-PA; large-signal characteristics; small-signal characteristics; static characteristics; BiCMOS integrated circuits; CMOS process; CMOS technology; Design optimization; Heterojunction bipolar transistors; Inductors; Integrated circuit technology; Metal-insulator structures; Radio frequency; Silicon;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365771
