Title :
Design of dual-wideband low noise amplifier base on common gate topology
Author :
Meng-Ting Hsu ; Po-Yu Lee ; Yu-Zhang Huang
Author_Institution :
Dept. & Inst. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Douliou, Taiwan
Abstract :
This paper proposed a active notch filter for an UWB low noise amplifier (LNA) in 0.18μm CMOS process. The measurement of the input and output reflection coefficient S11, S22 are less than -10 dB, the maximum power gain S21 gives 18.7dB, the minimum of the noise figure is 4.8dB, the measured IIP3 is -8.1dBm at 6GHz. It consumes 6.1mW power consumption from a 1-V supply voltage including the output buffer.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; active filters; field effect MMIC; low noise amplifiers; notch filters; ultra wideband technology; CMOS process; UWB LNA; active notch filter; common gate topology; dual-wideband low noise amplifier design; frequency 6 GHz; input-output reflection coefficient; output buffer; power 6.1 mW; size 0.18 mum; voltage 1 V; Active filters; CMOS integrated circuits; CMOS technology; Impedance matching; Logic gates; Noise; Semiconductor device measurement; Current-reused; Low noise amplifier(LNA); Notch filter; Ultra-wide band(UWB);
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-6415-7
DOI :
10.1109/ASICON.2013.6811869
