DocumentCode
2064738
Title
AC and DC characteristics of carbon nanotube field-effect transistors
Author
Appenzeller, J.
Author_Institution
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2004
fDate
13-14 Sept. 2004
Firstpage
192
Lastpage
193
Abstract
Recent results on the DC as well as AC characteristics of carbon nanotube field-effect transistors (CN-FETs) are presented. Experimental data is discussed in the context of an extended Schottky barrier model and the potential of CNFETs for high frequency applications is elucidated.
Keywords
Schottky barriers; carbon nanotubes; field effect transistors; nanotube devices; C; CN-FET AC characteristics; CNFET DC characteristics; carbon nanotube field-effect transistors; extended Schottky barrier model; high frequency CNFET; CNTFETs; Carbon nanotubes; FETs; Frequency; High K dielectric materials; Nanotube devices; Organic materials; Scattering; Schottky barriers; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN
0-7803-8618-3
Type
conf
DOI
10.1109/BIPOL.2004.1365777
Filename
1365777
Link To Document