Impact of profile design and scaling on large signal performance of SiGe HBTs

Author

Pan, Jun ; Niu, Guofu ; Joseph, Alvin ; Harame, David L.

Author_Institution

Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA

fYear

2004

fDate

13-14 Sept. 2004

Firstpage

209

Lastpage

212

Abstract

This paper experimentally investigates the large signal performance of SiGe HBTs, including the impact of SiGe profile, breakdown voltage-speed tradeoff, and technology scaling. An inevitable tradeoff between optimum small signal gain/noise performance and large signal linearity is identified, and implications for profile optimization are established. Besides the expected small signal performance improvement, the 200 GHz SiGe technology shows an impressive large signal performance with a 36% power added efficiency at 20 GHz without any matching network for a supply voltage of only 1.1 V.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device breakdown; semiconductor materials; 1.1 V; 20 GHz; 200 GHz; 36 percent; HBT large signal performance; SiGe; breakdown voltage-speed tradeoff; large signal linearity; profile optimization; small signal gain/noise performance; technology scaling; Breakdown voltage; Electronic mail; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Microelectronics; RF signals; Radio frequency; Signal design; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

Print_ISBN

0-7803-8618-3

Type

conf

DOI

10.1109/BIPOL.2004.1365782

Filename

1365782