• DocumentCode
    2064873
  • Title

    Vertical profile design and transit time analysis of nano-scale SiGe HBTs for Terahertz fT

  • Author

    Shi, Yun ; Niu, Guofu

  • Author_Institution
    Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA
  • fYear
    2004
  • fDate
    13-14 Sept. 2004
  • Firstpage
    213
  • Lastpage
    216
  • Abstract
    We present a nano-scale SiGe HBT design for above Terahertz fT. The graded profile is shown to produce better performance than the box profile with the same total Ge (and hence film stability). A 2000 GHz·V fT×BVCEO is shown in simulations using the graded Ge profile.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; nanoelectronics; semiconductor device models; semiconductor materials; submillimetre wave transistors; HBT vertical profile design; SiGe; Terahertz transistors; box profile; film stability; graded profile; nanoscale HBT; transit time analysis; Design engineering; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Medical simulation; Microelectronics; Nanoscale devices; Silicon germanium; Statistics; Submillimeter wave technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
  • Print_ISBN
    0-7803-8618-3
  • Type

    conf

  • DOI
    10.1109/BIPOL.2004.1365783
  • Filename
    1365783
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2064873