DocumentCode
2064998
Title
A low complexity 0.13 μ SiGe BiCMOS technology for wireless and mixed signal applications
Author
Lanzerotti, L. ; Feilchenfeld, N. ; Coolbaugh, D. ; Slinkman, J. ; Gray, P. ; Sheridan, D. ; Higgins, J. ; Hodge, W. ; Gordon, M. ; Larsen, T. ; Gautsch, M. ; Lindgren, P. ; Murty, R. ; Rascoe, J. ; Watson, K. ; Stamper, T. ; Eshun, E. ; He, J. ; Downes,
Author_Institution
IBM Microelectronics Division
fYear
2004
fDate
13-14 Sept. 2004
Firstpage
237
Lastpage
240
Keywords
BiCMOS integrated circuits; CMOS technology; Costs; Electric breakdown; FETs; Foundries; Germanium silicon alloys; Implants; Isolation technology; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN
0-7803-8618-3
Type
conf
DOI
10.1109/BIPOL.2004.1365789
Filename
1365789
Link To Document