Title :
Unified Analytical Model for Switching Behavior of Magnetic Tunnel Junction
Author :
Hyein Lim ; Seungjun Lee ; Hyungsoon Shin
Author_Institution :
Dept. of Electron. Eng., Ewha Womans Univ., Seoul, South Korea
Abstract :
The switching time of the magnetic tunnel junction for spin-transfer torque magnetoresistive random access memory is investigated as a function of the current. We present a unified analytical model for switching time so that the problem of discontinuity around the critical current is solved. The suggested unified model shows excellent agreement with the experimental data of parallel/antiparallel states simultaneously. Furthermore, only one set of parameters is used to represent all switching regime in our model.
Keywords :
MRAM devices; magnetic switching; magnetic tunnelling; antiparallel states; critical current; magnetic tunnel junction; magnetoresistive random access memory; spin transfer torque; switching behavior; switching time; unified analytical model; Analytical models; Critical current density (superconductivity); Integrated circuit modeling; Junctions; Magnetic tunneling; Switches; Torque; Magnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM); spin-transfer torque (STT); switching time;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2293598
