25.4 A 1/f noise upconversion reduction technique applied to Class-D and Class-F oscillators

Author

Shahmohammadi, Mina ; Babaie, Masoud ; Staszewski, Robert Bogdan

Author_Institution

Delft Univ. of Technol., Delft, Netherlands

fYear

2015

fDate

22-26 Feb. 2015

Firstpage

1

Lastpage

3

Abstract

The 1/f (flicker) noise upconversion degrades the close-in spectrum of CMOS RF oscillators. The resulting 1/f³ phase noise (PN) can be an issue in PLLs with a loop bandwidth of <;1MHz, which practically implies all cellular phones. A previously published noise-filtering technique [1] and adding resistors in series with g_m-device drains [2] have shown significant reduction of the 1/f³ oscillator PN corner. However, the former needs an additional tunable inductor and the latter degrades PN in the 20dB/dec region.

Keywords

1/f noise; CMOS integrated circuits; flicker noise; phase noise; radiofrequency oscillators; 1-f noise upconversion reduction technique; CMOS RF oscillators; Class-D oscillators; Class-F oscillators; PLL; close-in spectrum; flicker; gm-device drains; noise-filtering technique; phase noise; resistors; tunable inductor; 1f noise; CMOS integrated circuits; Capacitors; Harmonic analysis; Inductors; Oscillators; Resonant frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid- State Circuits Conference - (ISSCC), 2015 IEEE International

Conference_Location

San Francisco, CA

Print_ISBN

978-1-4799-6223-5

Type

conf

DOI

10.1109/ISSCC.2015.7063117

Filename

7063117