An improved analytical series resistance model for on-chip stacked inductors

An analytical series resistance model for on-chip stacked inductors with improved accuracy is proposed. As frequency increases and more metal layers are used, the proximity effect becomes very prominent for the series resistance. Through a precise modeling of the proximity effect in stacked inductors, the proposed model obtain a significant improvement on accuracy over the previous models. Numerical simulation and silicon measurement were performed to verify the model. The demonstrated supported the proposed model with an extended valid frequency range.