Title :
A CW GaAs TUNNETT Diode Source for 100 GHz and Above
Author :
Eisele, H. ; Kidner, C. ; Haddad, G.I.
Author_Institution :
Center for Space Terahertz Technology, Department of Electrical Engineering & Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122
Abstract :
GaAs p++n+nn+ TUNNETT diodes have been designed for operation around 100 GHz using a saturated drift velocity of 4.6 × 106 cms¿1 for electrons at high electric fields and a temperature of 500 K. Diodes on integral heat sinks have been successfully fabricated and tested in this frequency range in a WR-10 full-height waveguide cavity with a resonant cap on top of the diode. A DC to RF conversion efficiency of 3.4 % has been obtained at 101.8 GHz and an output power of 33 mW. These results are the best reported from TUNNETT diodes to date. These GaAs TUNNETT diodes have shown clean spectra as free running oscillators.
Keywords :
Diodes; Electron mobility; Gallium arsenide; Heat sinks; Power generation; Radio frequency; Resistance heating; Resonance; Temperature distribution; Testing;
Conference_Titel :
Microwave Conference, 1992. 22nd European
Conference_Location :
Helsinki, Finland
DOI :
10.1109/EUMA.1992.335710
