Title :
27.2 A1.2μg/√Hz-resolution 0.4μg-bias-instability MEMS silicon oscillating accelerometer with CMOS readout circuit
Author :
Xi Wang ; Jian Zhao ; Yang Zhao ; Guo Ming Xia ; An Ping Qiu ; Yan Su ; Yong Ping Xu
Author_Institution :
Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
Inertial navigation sets a very stringent requirement on the long-term stability of an accelerometer, which is characterized by bias instability. Long-term stability demands a very low-noise design. Accelerometers based on capacitance sensing are the mainstream MEMS accelerometers reported recently [1-3]. The state-of-the-art achieves 1μg bias instability and 2μg/Hz1/2 resolution with a full scale of ±15g [1]. Compared with capacitive accelerometers, a MEMS silicon oscillating accelerometer (SOA) has the advantage of large input dynamic range and has potential to achieve better performance. So far, only a few SOAs with CMOS readout circuits have been reported. Among them, the best performance metrics achieved are 4μg bias instability and 20μg/Hz1/2 resolution [4].
Keywords :
CMOS integrated circuits; accelerometers; elemental semiconductors; inertial navigation; microsensors; readout electronics; silicon; stability; CMOS readout circuits; MEMS silicon oscillating accelerometer; SOA; Si; bias instability; capacitance sensing; inertial navigation; long term stability; Accelerometers; Frequency measurement; Micromechanical devices; Noise; Resonant frequency; Semiconductor optical amplifiers; Sensors;
Conference_Titel :
Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-6223-5
DOI :
10.1109/ISSCC.2015.7063133