• DocumentCode
    2066441
  • Title

    27.2 A1.2μg/√Hz-resolution 0.4μg-bias-instability MEMS silicon oscillating accelerometer with CMOS readout circuit

  • Author

    Xi Wang ; Jian Zhao ; Yang Zhao ; Guo Ming Xia ; An Ping Qiu ; Yan Su ; Yong Ping Xu

  • Author_Institution
    Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2015
  • fDate
    22-26 Feb. 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Inertial navigation sets a very stringent requirement on the long-term stability of an accelerometer, which is characterized by bias instability. Long-term stability demands a very low-noise design. Accelerometers based on capacitance sensing are the mainstream MEMS accelerometers reported recently [1-3]. The state-of-the-art achieves 1μg bias instability and 2μg/Hz1/2 resolution with a full scale of ±15g [1]. Compared with capacitive accelerometers, a MEMS silicon oscillating accelerometer (SOA) has the advantage of large input dynamic range and has potential to achieve better performance. So far, only a few SOAs with CMOS readout circuits have been reported. Among them, the best performance metrics achieved are 4μg bias instability and 20μg/Hz1/2 resolution [4].
  • Keywords
    CMOS integrated circuits; accelerometers; elemental semiconductors; inertial navigation; microsensors; readout electronics; silicon; stability; CMOS readout circuits; MEMS silicon oscillating accelerometer; SOA; Si; bias instability; capacitance sensing; inertial navigation; long term stability; Accelerometers; Frequency measurement; Micromechanical devices; Noise; Resonant frequency; Semiconductor optical amplifiers; Sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    978-1-4799-6223-5
  • Type

    conf

  • DOI
    10.1109/ISSCC.2015.7063133
  • Filename
    7063133