Title :
A Ku-Band Low-Noise HEMT Amplifier MMIC for Receiver Applications
Author :
Wenger, J. ; Klaassen, A. ; Narozny, P.
Author_Institution :
Daimler-Benz AG, Research Center, Wilhelm-Runge-Str. 11, D-7900 Ulm (Germany)
Abstract :
A three stage monolithic low-noise HEMT amplifier has been designed and fabricated for Ku-band receiver applications. The key element for the ultra low noise figure of the amplifier is an AlGaAs/GaAs HEMT with 0.3 ¿m gate length and a gate width of 120 ¿m. Single devices have shown a noise figure of 0.7 dB and an associated gain of 11.5 dB at 12 GHz. A monolithic amplifier chip has demonstrated a gain of 21.5 dB and a very low noise figure of 1.4 dB at 13 GHz, the input and output return losses are better than ¿30 dB and ¿20 dB, respectively. These data represent the best results yet reported for a low-noise Ku-band MMIC amplifier on GaAs.
Keywords :
Gain; Gallium arsenide; HEMTs; Low-noise amplifiers; MMICs; Metallization; Microwave circuits; Noise figure; Noise measurement; Space technology;
Conference_Titel :
Microwave Conference, 1992. 22nd European
Conference_Location :
Helsinki, Finland
DOI :
10.1109/EUMA.1992.335765
