• DocumentCode
    2066549
  • Title

    Low-Noise, Low DC Power Linear FET

  • Author

    Ikäläinen, Pertti K. ; Witkowski, Larry C. ; Kao, Yung-Chung

  • Author_Institution
    Texas Instruments, Inc., Central Research laboratories, Dallas, Texas.
  • Volume
    1
  • fYear
    1992
  • fDate
    5-9 Sept. 1992
  • Firstpage
    570
  • Lastpage
    575
  • Abstract
    A two-tone third-order output intercept point (OIP3) of 45 dBm has been achieved at 10 GHz with a 280-¿m GaAs MBE FET using only 248 mW of DC bias giving an OIP3/Pdc ratio of 128. Noise figure at that bias and tuning was 3.23 dB. Minimum noise figure of the same device was 1.43 dB.
  • Keywords
    Dynamic range; Energy consumption; FETs; Gallium arsenide; Linearity; Molecular beam epitaxial growth; Noise figure; Noise measurement; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1992. 22nd European
  • Conference_Location
    Helsinki, Finland
  • Type

    conf

  • DOI
    10.1109/EUMA.1992.335766
  • Filename
    4135510
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2066549