• DocumentCode
    2066684
  • Title

    Transition metal dichalcogenides — A new material class for semiconductor electronics?

  • Author

    Schwierz, Frank

  • Author_Institution
    Inst. fur Mikro- und Nanotechnologien, Tech. Univ. Ilmenau, Ilmenau, Germany
  • fYear
    2013
  • fDate
    28-31 Oct. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Since three years we witness a continuously increasing interest of the electronic device community in the new material class of single/few-layer TMDs. The present paper introduces this type of materials, discusses the properties of TMDs relevant for electronic applications, and reviews the state-of-the-art of TMD transistors. Besides the achievements, problems of TMD transistors are discussed and the prospects of TMDs in electronics are examined.
  • Keywords
    MOSFET; chalcogenide glasses; molybdenum compounds; MOSFET; MoS2; TMD transistors; semiconductor electronics; transition metal dichalcogenides; Graphene; Logic gates; MOSFET; Materials; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2013 IEEE 10th International Conference on
  • Conference_Location
    Shenzhen
  • ISSN
    2162-7541
  • Print_ISBN
    978-1-4673-6415-7
  • Type

    conf

  • DOI
    10.1109/ASICON.2013.6811950
  • Filename
    6811950
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2066684