Title :
Transition metal dichalcogenides — A new material class for semiconductor electronics?
Author_Institution :
Inst. fur Mikro- und Nanotechnologien, Tech. Univ. Ilmenau, Ilmenau, Germany
Abstract :
Since three years we witness a continuously increasing interest of the electronic device community in the new material class of single/few-layer TMDs. The present paper introduces this type of materials, discusses the properties of TMDs relevant for electronic applications, and reviews the state-of-the-art of TMD transistors. Besides the achievements, problems of TMD transistors are discussed and the prospects of TMDs in electronics are examined.
Keywords :
MOSFET; chalcogenide glasses; molybdenum compounds; MOSFET; MoS2; TMD transistors; semiconductor electronics; transition metal dichalcogenides; Graphene; Logic gates; MOSFET; Materials; Radio frequency;
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-6415-7
DOI :
10.1109/ASICON.2013.6811950