DocumentCode :
2066684
Title :
Transition metal dichalcogenides — A new material class for semiconductor electronics?
Author :
Schwierz, Frank
Author_Institution :
Inst. fur Mikro- und Nanotechnologien, Tech. Univ. Ilmenau, Ilmenau, Germany
fYear :
2013
fDate :
28-31 Oct. 2013
Firstpage :
1
Lastpage :
4
Abstract :
Since three years we witness a continuously increasing interest of the electronic device community in the new material class of single/few-layer TMDs. The present paper introduces this type of materials, discusses the properties of TMDs relevant for electronic applications, and reviews the state-of-the-art of TMD transistors. Besides the achievements, problems of TMD transistors are discussed and the prospects of TMDs in electronics are examined.
Keywords :
MOSFET; chalcogenide glasses; molybdenum compounds; MOSFET; MoS2; TMD transistors; semiconductor electronics; transition metal dichalcogenides; Graphene; Logic gates; MOSFET; Materials; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
ISSN :
2162-7541
Print_ISBN :
978-1-4673-6415-7
Type :
conf
DOI :
10.1109/ASICON.2013.6811950
Filename :
6811950
Link To Document :
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