Title :
90 GHz SIMMWIC Rectennas
Author :
Strohm, K.M. ; Buechler, J. ; Luy, J.F.
Author_Institution :
Daimler Benz Research Center, Wilhelm-Runge-Str. 11, D-7900 Ulm, Germany
Abstract :
Rectifying antennas (Rectennas) have been fabricated with zero bias n- and p-Schottky barrier diodes and planar antenna structures on high-resistivity silicon substrates. The rectenna is manufactured by silicon monolithic millimeter wave integrated circuit (SIMMWIC) technology. The maximum sensitivity of the rectenna is 153 mV/(mWcm¿2) at 94 GHz. The equivalent TSS is smaller than ¿41 dBm.
Keywords :
Anodes; Fabrication; Metallization; Millimeter wave technology; Rectennas; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon; Substrates;
Conference_Titel :
Microwave Conference, 1992. 22nd European
Conference_Location :
Helsinki, Finland
DOI :
10.1109/EUMA.1992.335772
