DocumentCode
2066720
Title
A HFET millimeterwave resistive mixer
Author
Zirath, Herbert ; Angelov, Ilcho ; Rorsman, Niklas
Author_Institution
Applied Electron Physics, Chalmers University of Technology, Göteborg, Sweden
Volume
1
fYear
1992
fDate
5-9 Sept. 1992
Firstpage
614
Lastpage
619
Abstract
A millimeterwave resistive mixer based on a heterostructure field effect transistor (HFET) is described. A minimum conversion loss of 8 dB, including losses in the connectors, filters, substrates etc, is obtained in the frequency range 40-45 GHz. This is the highest frequency of operation reported for this type of mixer.
Keywords
Circuit noise; Circuit simulation; Frequency measurement; Gallium arsenide; HEMTs; MODFETs; Mixers; Scattering parameters; Semiconductor device modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1992. 22nd European
Conference_Location
Helsinki, Finland
Type
conf
DOI
10.1109/EUMA.1992.335773
Filename
4135517
Link To Document