DocumentCode
2066733
Title
A New Approach for FET Modelling
Author
Nevermann, P. ; Wolff, I.
Author_Institution
Department of Electrical Engineering and Sonderforschungsbereich 254, Duisburg University, Bismarckstr. 81, D-4100 Duisburg, FRG
Volume
1
fYear
1992
fDate
5-9 Sept. 1992
Firstpage
620
Lastpage
625
Abstract
A FET model is presented whichl is based on an analytical approximation of the velocity overshoot. The bias dependent peak velocity and the electric field in short-channel-FET´s are described by means of a new principle in physical simulation. Thiis approach is equivalent to the use of a saturation velocity, whiiclh depends not only on gate-length but also on bias. Surface effects are taken into account in a simple way. The theoretical results are in good agreement with experimental data of the small signal and noise behaviour of a GaAs-MESFET.
Keywords
Acceleration; Analytical models; Differential equations; Electrons; FETs; Gallium arsenide; MESFETs; Predictive models; TV; Virtual manufacturing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1992. 22nd European
Conference_Location
Helsinki, Finland
Type
conf
DOI
10.1109/EUMA.1992.335774
Filename
4135518
Link To Document