A novel scaling theory for fully-depleted omega-gate (ΩG) MOSFETs

Author

Gao Hong-Wun ; Te-Kuang Chiang

fYear

2013

fDate

28-31 Oct. 2013

Firstpage

1

Lastpage

3

Abstract

A novel scaling theory for fully-depleted omega-gate (ΩG) MOSFETs including rectangular-shaped ΩG (RΩG) and cylindrical-shaped ΩG (CΩG) FETs is presented. The natural length for ΩG MOSFET is obtained by the equation of equivalent number of gates (ENG), where the ΩG device can be virtually broken into equivalent double-gate (DG) and single-gate (SG) transistors working in parallel based on perimeter-weighted-sum method. Numerical device simulation data for DIBL were compared to the model to validate the formula. Among RΩG devices, one with a square cross section and/or large oxide underlap coverage factor (OUCF) will show the worst immunity to DIBL due to the largest natural length. For equivalent short-channel control, the RΩG MOSFET with OUCF=0.3 illustrates an improvement of up to 25% in the minimum channel length when compared to the DG MOSFET.

Keywords

MOSFET; numerical analysis; semiconductor device models; CΩG MOSFET; DG transistors; DIBL; ENG; OUCF; RΩG MOSFET; SG transistors; cylindrical-shaped ΩG MOSFET; equivalent double-gate transistors; equivalent number of gates; equivalent short-channel control; fully-depleted omega-gate MOSFETs; large oxide underlap coverage factor; numerical device simulation data; perimeter-weighted-sum method; rectangular-shaped ΩG MOSFET; scaling theory; single-gate transistors; square cross section; Data models; Equations; Logic gates; MOSFET; Mathematical model; (CΩG) MOSFETs.; Cylindrical-shaped ΩGate; Equivalent number of gates (ENG); Natural length; Oxide underlay coverage factor (OUCF); Rectangular-shaped ΩGate (RΩG) MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC (ASICON), 2013 IEEE 10th International Conference on

Conference_Location

Shenzhen

ISSN

2162-7541

Print_ISBN

978-1-4673-6415-7

Type

conf

DOI

10.1109/ASICON.2013.6811953

Filename

6811953