Title :
Building-in reliability in BCD (Bipolar-CMOS-DMOS) technologies
Author :
Jifa Hao ; Kopley, T.E.
Author_Institution :
Fairchild Semicond., South Portland, ME, USA
Abstract :
This paper discusses the “Building-In Reliability” (BIR) approach to process development, particularly for technologies integrating Bipolar, CMOS, and DMOS devices (so-called BCD technologies). Examples of BIR reliability assessments include gate oxide integrity (GOI) through Time-Dependent Dielectric Breakdown (TDDB) studies and degradation of laterally diffused MOS (LDMOS) devices by Hot-Carrier Injection (HCI) stress. TDDB allows calculation of gate oxide failure rates based on operating voltage waveforms and temperature. HCI causes increases in LDMOS resistance (Rdson), which decreases efficiency in power applications.
Keywords :
BIMOS integrated circuits; MIS devices; integrated circuit reliability; semiconductor device breakdown; BIR reliability assessments; LDMOS devices; bipolar-CMOS-DMOS technologies; building-in reliability; failure rates; gate oxide integrity; hot-carrier injection stress; laterally diffused MOS degradation; operating voltage waveforms; time-dependent dielectric breakdown; Degradation; Human computer interaction; Logic gates; Reliability engineering; Semiconductor device reliability; Stress;
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-6415-7
DOI :
10.1109/ASICON.2013.6811954
