• DocumentCode
    2066824
  • Title

    Networking industry trends in ESD protection for high speed IOs

  • Author

    Wong, Rita ; Fung, Rita ; Shi-Jie Wen

  • Author_Institution
    Component Quality & Technol., Cisco Syst. Inc., San Jose, CA, USA
  • fYear
    2013
  • fDate
    28-31 Oct. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Data rates in networking applications have increased as demand for more data increases. To achieve the high performance, the data rates in high speed IOs have continued to increase. These high data rates require the IO capacitances have to be very low. ESD protection structures have traditionally been large to handle the large transient currents. Recently, the high speed IO has limited the capacitance associated with ESD structures, making ESD protection design for high speed IOs extremely challenging. This paper will discuss the networking industry´s trends in high speed IOs, the capacitance requirements and resulting challenges for ESD protection designs. To achieve the proper ESD protection, on chip ESD protection schemes will need to change and/or ESD protection specifications may need to lower targeted protection levels. This is a hotly argued topic in the high speed networking industry, which may change the next-generation ESD protection design dramatically. We will discuss the possible ESD design outcomes due to the high speed IOs scaling trends.
  • Keywords
    electrostatic discharge; high-speed integrated circuits; ESD protection; IO; electrostatic discharge; networking industry; transient currents; Capacitance; Discharges (electric); Electrostatic discharges; Market research; Semiconductor device modeling; Standards; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2013 IEEE 10th International Conference on
  • Conference_Location
    Shenzhen
  • ISSN
    2162-7541
  • Print_ISBN
    978-1-4673-6415-7
  • Type

    conf

  • DOI
    10.1109/ASICON.2013.6811955
  • Filename
    6811955