DocumentCode :
2066824
Title :
Networking industry trends in ESD protection for high speed IOs
Author :
Wong, Rita ; Fung, Rita ; Shi-Jie Wen
Author_Institution :
Component Quality & Technol., Cisco Syst. Inc., San Jose, CA, USA
fYear :
2013
fDate :
28-31 Oct. 2013
Firstpage :
1
Lastpage :
4
Abstract :
Data rates in networking applications have increased as demand for more data increases. To achieve the high performance, the data rates in high speed IOs have continued to increase. These high data rates require the IO capacitances have to be very low. ESD protection structures have traditionally been large to handle the large transient currents. Recently, the high speed IO has limited the capacitance associated with ESD structures, making ESD protection design for high speed IOs extremely challenging. This paper will discuss the networking industry´s trends in high speed IOs, the capacitance requirements and resulting challenges for ESD protection designs. To achieve the proper ESD protection, on chip ESD protection schemes will need to change and/or ESD protection specifications may need to lower targeted protection levels. This is a hotly argued topic in the high speed networking industry, which may change the next-generation ESD protection design dramatically. We will discuss the possible ESD design outcomes due to the high speed IOs scaling trends.
Keywords :
electrostatic discharge; high-speed integrated circuits; ESD protection; IO; electrostatic discharge; networking industry; transient currents; Capacitance; Discharges (electric); Electrostatic discharges; Market research; Semiconductor device modeling; Standards; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
ISSN :
2162-7541
Print_ISBN :
978-1-4673-6415-7
Type :
conf
DOI :
10.1109/ASICON.2013.6811955
Filename :
6811955
Link To Document :
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