Title :
A novel test scheme for NAND flash memory based on built-in oscillator ring
Author :
Si Chen ; Xiaole Cui ; Chung-Len Lee
Author_Institution :
Shenzhen Grad. Sch., Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
Abstract :
Physical defects in the cells of the NAND Flash memory fluctuate the current flowing through the memory string. Two oscillator ring based test schemes for NAND Flash memory are proposed. The oscillator ring scheme for single column has good diagnostic capability, and the double ring scheme are sensitive to both SA0/SA1 faults and some soft errors. Experimental results validated the effectiveness of these methods.
Keywords :
fault diagnosis; flash memories; integrated circuit testing; oscillators; NAND flash memory; SA0 fault; SA1 fault; built-in oscillator ring; fault diagnosis; memory string; physical defects; soft error; Circuit faults; Delays; Flash memories; Ring oscillators; Sensors; Testing; DfT; NAND Flash Memory; Oscillator Ring;
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-6415-7
DOI :
10.1109/ASICON.2013.6811957
