Title :
TSC study of phase transition of vanadyl phthalocyanine thin film produced on glass by molecular beam epitaxy technique
Author :
Maeda, A. ; Zhu, L.C. ; Furuhashi, H. ; Yoshikawa, T. ; Ohashi, A. ; Kojima, K. ; Uchida, Y. ; Ochiai, S. ; Ieda, M. ; Mizutani, T.
Author_Institution :
Dept. of Elect. Eng., Aichi Inst. of Technol., Toyota, Japan
Abstract :
Vanadyl phthalocyanine (VOPc) films were produced on glass substrates by the MBE technique. Films produced at a substrate temperature of room temperature have a phase I, which displays absorption peaks at 680 nm and 740 nm in UV-visible spectroscopy. The red-shifted phase introduced by heating at 100°C for one hour is called phase II. We investigated the phase transition process from phase I to phase II with the TSC method. The TSCs of VOPc/glass measured under a poling temperature of 100°C and poling voltage of 600 V have three peaks. Two peaks are related to the glass substrates. The remaining peak near -30°C is related to the VOPc film. A polarization of the film is suggested to occur in the phase I to II transition region. The force between molecules is a Van der Waals force so that the depolarization in the phase transition is suggested to be below room temperature. Therefore, the peak is concluded to be due to the phase transition process of VOPc thin film
Keywords :
dielectric polarisation; dielectric thin films; epitaxial layers; molecular beam epitaxial growth; optical films; optical harmonic generation; organic compounds; solid-state phase transformations; thermally stimulated currents; ultraviolet spectra; van der Waals forces; vanadium compounds; visible spectra; 100 degC; 600 V; 680 nm; 740 nm; MBE technique; TSC study; UV-visible spectroscopy; Van der Waals force; molecular beam epitaxy technique; phase transition; phase transition process; polarization; poling temperature; red-shifted phase; substrate temperature; vanadyl phthalocyanine thin film; Absorption; Displays; Glass; Heating; Molecular beam epitaxial growth; Spectroscopy; Substrates; Temperature; Transistors; Voltage;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1997. IEEE 1997 Annual Report., Conference on
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3851-0
DOI :
10.1109/CEIDP.1997.634562