• DocumentCode
    2067338
  • Title

    Millimeter-Wave MIC and MMIC Amplifiers using Pseudomorphic HEMT

  • Author

    Shibata, Kiyoyasu ; Yoshinaga, Hiroyuki ; Shino, Toshio ; Hori, Shigekazu

  • Author_Institution
    Microwave Solid State Department, Komukai Works, TOSHIBA CORPORATION
  • Volume
    2
  • fYear
    1992
  • fDate
    5-9 Sept. 1992
  • Firstpage
    758
  • Lastpage
    766
  • Abstract
    This paper reviews the recent works at Toshiba millimeter-wave amplifiers based on the pseudomorphic HEMTs. The HEMT devices used is 0.1 ¿ m-gate planar doped pseudomorphic HEMT with a gate width of 50 or 100 ¿ m. Structures, performances and applications of 43 GHz- and 60 GHz-bands amplifiers and 40-60 GHz amplifier have been presented with emphasis on their practicability as well as their low noise performance. Monolithic gain blocks which are essentially HEMT chips with monolithically integrated matching circuits are also described.
  • Keywords
    HEMTs; Integrated circuit noise; Low-noise amplifiers; MMICs; Microwave integrated circuits; Millimeter wave integrated circuits; Millimeter wave technology; Millimeter wave transistors; Noise figure; PHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1992. 22nd European
  • Conference_Location
    Helsinki, Finland
  • Type

    conf

  • DOI
    10.1109/EUMA.1992.335797
  • Filename
    4135542