DocumentCode
2067338
Title
Millimeter-Wave MIC and MMIC Amplifiers using Pseudomorphic HEMT
Author
Shibata, Kiyoyasu ; Yoshinaga, Hiroyuki ; Shino, Toshio ; Hori, Shigekazu
Author_Institution
Microwave Solid State Department, Komukai Works, TOSHIBA CORPORATION
Volume
2
fYear
1992
fDate
5-9 Sept. 1992
Firstpage
758
Lastpage
766
Abstract
This paper reviews the recent works at Toshiba millimeter-wave amplifiers based on the pseudomorphic HEMTs. The HEMT devices used is 0.1 ¿ m-gate planar doped pseudomorphic HEMT with a gate width of 50 or 100 ¿ m. Structures, performances and applications of 43 GHz- and 60 GHz-bands amplifiers and 40-60 GHz amplifier have been presented with emphasis on their practicability as well as their low noise performance. Monolithic gain blocks which are essentially HEMT chips with monolithically integrated matching circuits are also described.
Keywords
HEMTs; Integrated circuit noise; Low-noise amplifiers; MMICs; Microwave integrated circuits; Millimeter wave integrated circuits; Millimeter wave technology; Millimeter wave transistors; Noise figure; PHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1992. 22nd European
Conference_Location
Helsinki, Finland
Type
conf
DOI
10.1109/EUMA.1992.335797
Filename
4135542
Link To Document