An Efficient Technique for Computing the S-Parameters of MESFETs from a Semiclassical Model, Including Thermal Effects

The Fourier decomposition method is used to compute the small-signal parameters of GaAs MESFETs via a semiclassical electro-thermal physical model. The discrete system of equations is first linearised to avoid factorising the Jacobian at each time step and to make the computation independent of the voltage step amplitude applied to the device contacts. The system is further modified to avoid truncation error in the computation. Furthermore, the new system is more computationally efficient.