DocumentCode
2067508
Title
In-situ observation of the failure induced by thermomigration of interstitial Cu in Pb-free flip chip solder joints
Author
Chen, Hsiao-Yun ; Chen, Chih
Author_Institution
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsin-chu
fYear
2009
fDate
26-29 May 2009
Firstpage
319
Lastpage
324
Abstract
Thermomigration in Pb-free SnAg solder joints is investigated during accelerated electromigration tests under 9.7times103 A/cm2 at 150degC. Different from Pb-containing solders, it is found that Cu-Sn intermetallic compounds (IMCs) migrate toward the cold end on the substrate end and thus voids accumulate in the passivation opening for the bump with current flowing from the substrate end to the chip end. Theoretical calculation indicates that the thermomigration force is greater than the electromigration force at a thermal gradient above 400degC/cm. Copper atoms may migrate against current flow and become the dominant diffusion species. Also, the Q* can be estimated around 11 kJ/mole. On the other hand, a control experiment shows that Ni-Sn IMCs did not migrate even under a huge thermal gradient over 1400degC/cm.
Keywords
copper; copper alloys; failure analysis; flip-chip devices; interstitials; life testing; passivation; silver alloys; solders; thermal analysis; thermal diffusion; tin alloys; Cu-Sn; SnAg; copper atoms; current flow; failure analysis; flip chip solder joint; intermetallic compounds; passivation; solder joint reliability; temperature 150 C; thermal gradient; thermomigration; Copper; Electromigration; Failure analysis; Flip chip solder joints; Intermetallic; Metallization; Proximity effect; Soldering; Substrates; Thermal force;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 2009. ECTC 2009. 59th
Conference_Location
San Diego, CA
ISSN
0569-5503
Print_ISBN
978-1-4244-4475-5
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2009.5074034
Filename
5074034
Link To Document