Three dimensional interconnects with high aspect ratio TSVs and fine pitch solder microbumps

Author

Yu, Aibin ; Lau, John H. ; Ho, Soon Wee ; Kumar, Aditya ; Yin, Hnin Wai ; Ching, Jong Ming ; Kripesh, Vaidyanathan ; Pinjala, Damaruganath ; Chen, Scott ; Chan, Chien-Feng ; Chao, Chun-Chieh ; Chiu, Chi-Hsin ; Huang, Chih-Ming ; Chen, Carl

Author_Institution

Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore

fYear

2009

fDate

26-29 May 2009

Firstpage

350

Lastpage

354

Abstract

High density three dimensional (3D) interconnects formed by high aspect ratio through silicon vias (TSVs) and fine pitch solder microbumps are presented in this paper. The aspect ratio of the TSV is larger than 10 and filled with Cu without voids; there are electrical nickel and immersion gold (ENIG) pads on top of the TSV as under bump metallurgy (UBM) layer. On the Si chip, Cu/Sn solder microbumps with 16 mum in diameter and 25 mum in pitch are fabricated. After singulating the Si chip and the Si carrier, there are joined together and the interconnection is formed between them through the solder micro bumps and the TSV.

Keywords

copper alloys; fine-pitch technology; integrated circuit interconnections; metallurgy; silicon; solders; tin alloys; CuSn; Si; electrical nickel; fine pitch solder microbumps; high density 3D interconnects; immersion gold pads; integrated circuit interconnection; silicon chip; through silicon vias; under bump metallurgy; Assembly; Bonding; Copper; Etching; Fabrication; Lithography; Packaging machines; Stacking; Through-silicon vias; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 2009. ECTC 2009. 59th

Conference_Location

San Diego, CA

ISSN

0569-5503

Print_ISBN

978-1-4244-4475-5

Electronic_ISBN

0569-5503

Type

conf

DOI

10.1109/ECTC.2009.5074039

Filename

5074039