DocumentCode
2067917
Title
Optical and electrical properties of In.48(AlxGa(1-x)).52P grown by solid source MBE using a GaP decomposition source
Author
Missous, M.
Author_Institution
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
fYear
2001
fDate
2001
Firstpage
1
Lastpage
8
Abstract
The use of GaP as a source material for the generation of P2 is shown to lead to the growth of a wide range of phosphide materials with excellent optical and electrical qualities. The compatibility of this source with a conventional solid source molecular beam epitaxy system is demonstrated through the continuous use of this cell for over 5 years with no safety or materials issues arising. The application of this cell to the growth of state of the art optoelectronics and microwave devices is illustrated
Keywords
III-V semiconductors; aluminium compounds; carrier density; deep level transient spectroscopy; gallium compounds; indium compounds; microwave devices; molecular beam epitaxial growth; optoelectronic devices; photoluminescence; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; DLTS; GaP; GaP decomposition source; In0.48(AlxGa(1-x))0.52 ; In0.48(AlxGa(1-x))0.52 P growth; P2; P2 generation; carrier concentrations; carrier depth profiles; electrical properties; electrochemical CV profiling; microwave devices; optical properties; optoelectronic devices; phosphide materials growth; photoluminescence spectra; semiconductor films; solid source MBE; Gallium; Hydrogen; Indium phosphide; Mass spectroscopy; Monitoring; Optical pumping; Pumps; Solids; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
Conference_Location
Vienna
Print_ISBN
0-7803-7049-X
Type
conf
DOI
10.1109/EDMO.2001.974274
Filename
974274
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