Title :
AlGaN/GaN microwave power transistors for S band
Author :
Uren, M.J. ; Hughes, B.T. ; Hayes, D.G. ; Hilton, K.P. ; Martin, T. ; Balmer, R.S. ; Birbeck, J.C.H. ; Davies, R.A.
Author_Institution :
Malvern Technol. Centre, QinetiQ Ltd, UK
Abstract :
Multifinger power transistors have been fabricated using AlGaN/GaN grown on insulating SiC by MOVPE. Using a 1 μm gate length device, f T of 10 GHz and fMAX of 24 GHz were found for a 1 mm wide device. A total power of 10 W pulsed was obtained for a 10 mm wide device at 2.8 GHz
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; vapour phase epitaxial growth; wide band gap semiconductors; 1 micron; 1 mm; 10 GHz; 10 W; 10 mm; 2 to 4 GHz; 24 GHz; AlGaN-GaN; AlGaN/GaN microwave power transistors; MOVPE; S-band operation; SiC; device fabrication; insulating SiC substrate; multi-finger power HEMTs; multifinger power transistors; Aluminum gallium nitride; Epitaxial layers; Gallium nitride; HEMTs; MODFETs; Power transistors; Pulse measurements; Silicon carbide; Thermal conductivity; Voltage;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
Conference_Location :
Vienna
Print_ISBN :
0-7803-7049-X
DOI :
10.1109/EDMO.2001.974278
