Title :
Effect of the device size on the performance of resonant-tunneling diodes
Author :
Figielski, T. ; Morawski, A. ; Pelya, O. ; Wosinski, T. ; Makosa, A. ; Tkaczyk, Z. ; Dobrowolski, W. ; Karczewski, G. ; Kosiel, K. ; Dobrzanski, L.
Author_Institution :
Inst. of Phys., Polish Acad. of Sci., Warsaw, Poland
Abstract :
Presents experimental results obtained with resonant-tunneling diodes fabricated from (GaAl)As/GaAs and (CdMg)Te/CdTe semiconductor heterostructures grown - respectively - by low-pressure metal-organic vapor-phase epitaxy and molecular-beam epitaxy methods. These results demonstrate, firstly, the appearance of intriguing oscillatory structure on the rising slope of the resonant peak in small-diameter (GaAl)As/GaAs-based devices and, secondly, the improvement of current-voltage characteristics of (CdMg)Te/CdTe-based resonant-tunneling diodes due to reduction of their cross-sectional area
Keywords :
II-VI semiconductors; MOCVD; aluminium compounds; cadmium compounds; gallium arsenide; magnesium compounds; molecular beam epitaxial growth; resonant tunnelling diodes; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; (CdMg)Te-CdTe; (CdMg)Te/CdTe; (GaAl)As-GaAs; (GaAl)As/GaAs; cross-sectional area; current-voltage characteristics; device size; low-pressure metal-organic vapor-phase epitaxy; molecular beam epitaxy methods; oscillatory structure; resonant peak; resonant-tunneling diodes; rising slope; semiconductor heterostructures; Current-voltage characteristics; Displays; Epitaxial growth; Gallium arsenide; Molecular beam epitaxial growth; Resonance; Resonant tunneling devices; Schottky diodes; Semiconductor diodes; Temperature;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
Conference_Location :
Vienna
Print_ISBN :
0-7803-7049-X
DOI :
10.1109/EDMO.2001.974283
