Title :
Simulation of the current fluctuations in reverse biased silicon devices
Author :
Apanasovich, V. ; Kautaniuk, A. ; Kuchinski, P. ; Lutkouskaya, K. ; Lutkovski, V.
Author_Institution :
Byelorussian State Univ., Minsk, Belarus
Abstract :
Current fluctuation processes in silicon avalanche photodiodes, noise generating and voltage-reference diodes are considered in this work. Plausible reasons of microplasma current fluctuations in the reverse-biased n-p junctions are analysed. Both simulation experiments and real experimental data showed that the current fluctuations in all tested diodes strongly depend on the device internal structure
Keywords :
avalanche photodiodes; current fluctuations; elemental semiconductors; p-n junctions; semiconductor device models; semiconductor diodes; silicon; Si; Si APD; avalanche photodiodes; current fluctuations simulation; device internal structure; microplasma current fluctuations; noise generating diodes; reverse biased Si devices; reverse-biased n-p junctions; voltage-reference diodes; Avalanche photodiodes; Dark current; Diodes; Fluctuations; Noise generators; Optical noise; Semiconductor device noise; Silicon devices; Testing; Voltage;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
Conference_Location :
Vienna
Print_ISBN :
0-7803-7049-X
DOI :
10.1109/EDMO.2001.974289
