• DocumentCode
    2068238
  • Title

    Characteristics of a millimeter wave drain mixer

  • Author

    Angelov, I. ; Zirath, H. ; Rorsman, N. ; Kollberg, E.

  • Author_Institution
    Applied Electron Physics, Chalmers University of Technology, Göteborg, Sweden
  • Volume
    2
  • fYear
    1992
  • fDate
    5-9 Sept. 1992
  • Firstpage
    987
  • Lastpage
    992
  • Abstract
    Different drain mixer configurations, based on Heterostructure Field Effect Transistors (HFET), working at millimeter waves were studied. The mixer has a conversion gain of 6-7 dB at 40 GHz with 5 GHz RF-bandwidth. This is the highest reported gain for an HFET-mixer working in this frequency band.
  • Keywords
    Frequency; Gain; HEMTs; MESFETs; MODFETs; Millimeter wave technology; Millimeter wave transistors; Mixers; Noise figure; Oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1992. 22nd European
  • Conference_Location
    Helsinki, Finland
  • Type

    conf

  • DOI
    10.1109/EUMA.1992.335833
  • Filename
    4135578
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2068238