DocumentCode :
2068245
Title :
A CMOS low-noise amplifier for BCC applications
Author :
Zhige Zou ; Wuyue Wang ; Jianming Lei ; Yu Guoyi ; Xuecheng Zou
Author_Institution :
Sch. of Opt. & Electron. Inf., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear :
2013
fDate :
28-31 Oct. 2013
Firstpage :
1
Lastpage :
4
Abstract :
In recent years, with the development of Wireless Body Area Network (WBAN), it has become the key technology which can be used in many medical and non-medical applications. The design of a low noise amplifier which is applied to the body-channel communication (BCC) is presented in this paper. It adopts TSMC RF CMOS 0.18μm process. Parallel resistor´s negative feedback structure and noise cancellation technology are respectively used for matching impedance and reducing circuit noise. Simulation results show that in 80-120Mhz BCC working frequency band, the circuit has a gain of 12dB, the noise figure is less than 3.5dB and the IIP3 is 1.4dBm, which all meet the design requirements.
Keywords :
CMOS analogue integrated circuits; body area networks; circuit noise; impedance matching; integrated circuit design; low noise amplifiers; radiofrequency amplifiers; radiofrequency integrated circuits; BCC; CMOS low-noise amplifier; RF CMOS; WBAN; body-channel communication; circuit noise; frequency 80 MHz to 120 MHz; gain 12 dB; impedance matching; size 0.18 mum; wireless body area network; CMOS integrated circuits; Impedance matching; Low-noise amplifiers; Noise cancellation; Radio frequency; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
ISSN :
2162-7541
Print_ISBN :
978-1-4673-6415-7
Type :
conf
DOI :
10.1109/ASICON.2013.6812009
Filename :
6812009
Link To Document :
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