A CMOS low-noise amplifier for BCC applications

Author

Zhige Zou ; Wuyue Wang ; Jianming Lei ; Yu Guoyi ; Xuecheng Zou

Author_Institution

Sch. of Opt. & Electron. Inf., Huazhong Univ. of Sci. & Technol., Wuhan, China

fYear

2013

fDate

28-31 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

In recent years, with the development of Wireless Body Area Network (WBAN), it has become the key technology which can be used in many medical and non-medical applications. The design of a low noise amplifier which is applied to the body-channel communication (BCC) is presented in this paper. It adopts TSMC RF CMOS 0.18μm process. Parallel resistor´s negative feedback structure and noise cancellation technology are respectively used for matching impedance and reducing circuit noise. Simulation results show that in 80-120Mhz BCC working frequency band, the circuit has a gain of 12dB, the noise figure is less than 3.5dB and the IIP3 is 1.4dBm, which all meet the design requirements.

Keywords

CMOS analogue integrated circuits; body area networks; circuit noise; impedance matching; integrated circuit design; low noise amplifiers; radiofrequency amplifiers; radiofrequency integrated circuits; BCC; CMOS low-noise amplifier; RF CMOS; WBAN; body-channel communication; circuit noise; frequency 80 MHz to 120 MHz; gain 12 dB; impedance matching; size 0.18 mum; wireless body area network; CMOS integrated circuits; Impedance matching; Low-noise amplifiers; Noise cancellation; Radio frequency; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC (ASICON), 2013 IEEE 10th International Conference on

Conference_Location

Shenzhen

ISSN

2162-7541

Print_ISBN

978-1-4673-6415-7

Type

conf

DOI

10.1109/ASICON.2013.6812009

Filename

6812009