Title :
GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure
Author :
Toriz-Garcia, J.J. ; Parbrook, P.J. ; Wood, D.A. ; David, J.P.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK
Abstract :
GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure grown by metalorganic vapour phase epitaxy (MOVPE) are reported. The metal contacts used in this work are Ti/Au or Au. The devices characterised present a low dark current below 1 pA and typical photocurrent I-V characteristics at 360 nm. The photodetectors exhibit internal gain and visible blindness. The responsivity is 0.001 A/W in the visible region, which is approximately three orders of magnitude less than the above gap responsivity
Keywords :
III-V semiconductors; Schottky diodes; dark conductivity; gallium compounds; gold; metal-semiconductor-metal structures; photodetectors; photodiodes; semiconductor epitaxial layers; semiconductor growth; titanium; ultraviolet detectors; vapour phase epitaxial growth; wide band gap semiconductors; 360 nm; GaN-Au; GaN-Ti-Au; MOVPE; Schottky ultraviolet photodetectors; dark current; gap responsivity; internal gain; metal-semiconductor-metal structure; metalorganic vapour phase epitaxy; photocurrent I-V characteristics; visible blindness; Dark current; Epitaxial growth; Epitaxial layers; Fingers; Gallium nitride; Gold; Photoconductivity; Photodetectors; Schottky barriers; Temperature;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
Conference_Location :
Vienna
Print_ISBN :
0-7803-7049-X
DOI :
10.1109/EDMO.2001.974296
