Author :
Chevalier, P. ; De Pestel, F. ; Ziad, H. ; Fatkhoutdinov, M. ; Ackaert, J. ; Coppens, P. ; Craninckx, J. ; Guncer, S. ; Pontioglu, A. ; Tasci, P. ; Yayil, F. ; Ergun, B.S. ; Kurhan, A.I. ; Vestiel, E. ; De Backer, E. ; Lohéac, J.L. ; Tack, M.
Abstract :
A SiGe BiCMOS process with a double-polysilicon self-aligned Heterojunction Bipolar Transistor (HBT) fabricated by means of selective epitaxy has been developed. The selective epitaxial growth is improved with the use of an innovative oxy-nitride interpoly layer which increases the growth rate. The HBT features a current gain cut-off frequency fT of 43 GHz and a maximum available cut-off frequency fMAX of 80 GHz at a collector-emitter bias voltage of 3 V. N-p-n transistors are integrated in 0.35 μm CMOS process with high quality RF passive components. A Low Noise Amplifier (LNA) designed in this technology for 5 GHz wireless local area networks (WLAN) demonstrated measurement data close to the simulated ones
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC; MMIC amplifiers; epitaxial growth; heterojunction bipolar transistors; integrated circuit technology; semiconductor materials; wireless LAN; 0.35 micron; 3 V; 43 GHz; 5 GHz; 80 GHz; BC035G technology; LNA design; WLAN; double-polysilicon self-aligned HBT; heterojunction bipolar transistor; high quality RF passive components; industrial SiGe BiCMOS technology; integrated n-p-n transistors; low noise amplifier; oxy-nitride interpoly layer; selective epitaxial growth process; wireless LAN; wireless local area networks; BiCMOS integrated circuits; CMOS process; Cutoff frequency; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Radio frequency; Silicon germanium; Voltage; Wireless LAN;
