Title :
Optimization of high-speed SiGe HBTs
Author :
Palankovski, V. ; Röhrer, G. ; Wachmann, E. ; Kraft, J. ; Löffle, B. ; Cervenka, J. ; Quay, R. ; Grasser, T. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Technische Univ. Wien, Vienna, Austria
Abstract :
We present a methodology for characterization and optimization of SiGe HBTs from our 0.8 μm BiCMOS technology. It involves process calibration, device calibration employing two-dimensional device simulation, and automated Technology Computer Aided Design (TCAD) optimization. The simulation results show a very good agreement with experimental data. In particular, we perform an optimization of collector doping for specific requirements (high speed or high breakdown voltage)
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; calibration; heterojunction bipolar transistors; optimisation; semiconductor device models; semiconductor materials; semiconductor process modelling; technology CAD (electronics); 0.8 micron; 2D device simulation; BiCMOS technology; SiGe HBTs; automated TCAD optimization; characterization; collector doping; device calibration; high breakdown voltage; high-speed HBTs; process calibration; technology computer aided design; Capacitance; Computational modeling; Doping profiles; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Ion implantation; Silicon carbide; Silicon germanium;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
Conference_Location :
Vienna
Print_ISBN :
0-7803-7049-X
DOI :
10.1109/EDMO.2001.974305
